WB4-7

Improvement of Jc properties for Ce, Hf and La co-doped GdBa2Cu3Oy thin films fabricated by fluorine-free MOD method

Dec.2 10:15-10:30 (Tokyo Time)

*Taishi Hatano1, Osuke Miura1, Ryusuke Kita2

Electrical Engineering and Computer Science, Tokyo Metropolitan University, Japan1

Electrical and Electronic Engineering, Shizuoka University, Japan2

We have succeeded in fabricating the first Ce doped GdBa2Cu3Oy films with high Jc by the fluorine-free MOD method. From our previous study, it is confirmed that La doping is very effective in promoting crystallization and crystal growth of the superconducting phase. Therefore, we have fabricated the Ce and La co-doped films and studied the Jc properties. Tc for non-doped film indicated around 90 K and those for Ce and La co-doped ones were slightly larger. At 77.3 K under 0 T, the Jc for 2.0 mol% Ce and 1.0 mol% La co-doped film achieved 3.28 MAcm-2 and increased by about 55% than only 2.0mol% Ce-doped. At 77.3K under 1.0T, that achieved 0.267 MAcm-2 and increased by about 67% than only 2.0mol% Ce-doped. By Ce doping, Fp also increased and the peak of Fp shifted to the high magnetic field side. Furthermore, we estimated the elementary pinning force (fp) according to the single vortex theory. fp indicated 4.23 Nm-1 and increased by about 60 % at 4.2 K for 2.0 mol% Ce and 1.0 mol% La co-doped film than that for only 2.0mol% Ce-doped. We also have studied the optimization of the heat treatment condition and investigated the properties of Ce and La co-doped film to improve Jc further.

Keywords: artificial pinning centers, metal organic deposition, fluorine-free metal organic deposition, GdBa2Cu3Oy