WB2-4

Improvement of critical current densities by controlling the film thickness for Ce doped FF-MOD GdBa2Cu3Oy
*Ryota Ishii1, Taishi Hatano1, Hayato Masuda1, Ryusuke Kita2, Osuke Miura1

We have fabricated Ce 2 mol% doped GdBa2Cu3Oy (Gd123) thin films on LaAlO3 substrates by FF-MOD to introduce the perovskite nanostructure of BaCeO3 as effective artificial pins into the films. By manipulating the thickness of the film layer, the size and density of the artificial pins were controlled, and the effect on the critical current densities was investigated. Three-layer film with a thickness of 100 nanometers each achieved the critical current densities of 1.03 MA cm-2 under 0 T, and 0.06 MA cm-2 under 1 T. On the other hand, five-layer film with a thickness of 60 nanometers each achieved the critical current densities of 1.74 MA cm-2 under 0 T, and 0.20 MA cm-2 under 1 T. Therefore, it was found that as the layer thickness was thinner, the critical current densities increased. This result suggests that the size of the introduced artificial pins is limited by the film thickness, and then the pin density increased.

Keywords: GdBa2Cu3Oy, BaCeO3, MOD method, FF-MOD